FCH47N60F ,N-Channel SuperFET?FRFET?MOSFET 600V, 47A, 73m?applications.DGTO-3PNGDSSAbsolute Maximum Ratings Symbol Parameter FCA47N60 FCA47N60_F109 UnitV Dra ..
FCH47N60N ,N-Channel SupreMOS?MOSFET 600V, 47A, 62m?applications.Application• Solar Inverter• AC-DC Power SupplyDGTO-247GDS SoMOSFET Maximum Ratings T ..
FCI11N60 ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCI25N60N_F102 , N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ
FCI25N60N_F102 , N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ
FCL20A015 , Schottky Barrier Diode
FM75M8 ,Low-Voltage Digital I2C compatible Temp Sensor fro LM75 applicationsFeatures Description• User Configurable to 9, 10, 11 or 12-bit Resolution Within the FM75 are: a hig ..
FM75M8X ,Low-Voltage Digital I2C compatible Temp Sensor fro LM75 applicationsFeatures Description• User Configurable to 9, 10, 11 or 12-bit Resolution Within the FM75 are: a hig ..
FM75MM8 ,Low-Voltage Digital I2C compatible Temp Sensor fro LM75 applicationsApplicationsInterrupt and Comparator modes. OS is active, if the • Battery Managementuser-programma ..
FM803JS3X ,4.00V, Active Low Open Drain Precision Reset Generator CircuitFM803 3-Pin µC Supervisor Device August 2004FM8033-Pin µC Supervisor De ..
FM803MS3X ,4.38V, Active Low Open Drain Precision Reset Generator CircuitFeaturesThe FM803 is a supervisory device designed to monitor power Automatic reset generation on ..
FM803MS3X ,4.38V, Active Low Open Drain Precision Reset Generator CircuitFeaturesThe FM803 is a supervisory device designed to monitor power Automatic reset generation on ..
FCH47N60F
N-Channel SuperFET?FRFET?MOSFET 600V, 47A, 73m?
FCA47N60 / FCA47N60_F109 N-Channel MOSFET March 2013 FCA47N60 / FCA47N60_F109 ® N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description ® ® • 650 V @ T = 150°C SuperFET MOSFET is Fairchild Semiconductor ’s first gener- J ation of high voltage super-junction (SJ) MOSFET family that is •Typ. R = 58 mΩ DS(on) utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Q = 210 nC) resistance and lower gate charge performance. This technology g is tailored to minimize conduction loss, provide superior switch- • Low Effective Output Capacitance (Typ. C .eff = 420 pF) oss ing performance, dv/dt rate and higher avalanche energy. Con- • 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G TO-3PN G D S S Absolute Maximum Ratings Symbol Parameter FCA47N60 FCA47N60_F109 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 47 A D C - Continuous (T = 100°C) 29.7 A C (Note 1) I Drain Current - Pulsed A DM 141 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1800 mJ AS I Avalanche Current (Note 1) 47 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 417 W D C - Derate above 25°C 3.33 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.3 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- θCS R Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W θJA ©2008 1 FCA47N60 FCA47N60_F109 Rev.C0
