FCB11N60TM ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB20N60TM ,600V N-Channel SuperFETFCB20N60 600V N-Channel MOSFETTMSuperFETFCB20N60 600V N-Channel MOSFET
FCBS0550 ,Smart Power Module (SPM)General DescriptionIt is an advanced smart power module (SPM) that Fairchild has• UL Certified No.E ..
FCD4N60 ,N-Channel SuperFET?MOSFET 600V, 3.9A, 1.2?applications.Application• Lighting• Solar Inverter• AC-DC Power SupplyDDGD-PAKGSSoMOSFET Maximum Ra ..
FCD5N60 ,N-Channel SuperFET?MOSFET 600V, 4.6A, 950m?applications.Application• LCD/LED TV and Monitor• Lighting• Solar Inverter• AC-DC Power SupplyDDGD- ..
FM27C010VE ,1/048/576-Bit 128K x 8 High Performance CMOS EPROMFeaturesThe “Don’t Care” feature during read operations allows memoryexpansions from 1M to 8M bits ..
FM27C040Q120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM. . . . . . . . . January 2000FM27C040 ..
FM27C040Q120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMBlock DiagramData Outputs O - O0 7VCCGNDVPPOutput Enable,OEChip Enable, andOutputCE/PGMProgram Log ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFeaturesThe FM27C040 is a high performance, 4,194,304-bit Electrically High performance CMOSProgr ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFeaturesThe FM27C040 is a high performance, 4,194,304-bit Electrically High performance CMOSProgr ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMElectrical Characteristics Over operating range with V = VPP CCSymbol Parameter Test Conditions Min ..
FCB11N60-FCB11N60TM
600V N-Channel SuperFET
FCB11N60 600V N-Channel MOSFET TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.32Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Q = 40nC) lower gate charge performance. g • Low effective output capacitance (typ. C .eff = 95pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D D ! ! "" !!"" "" G ! ! "" G ! ! S S Absolute Maximum Ratings Symbol Parameter FCB11N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 11 A D C - Continuous (T = 100°C) 7 A C (Note 1) I Drain Current - Pulsed A DM 33 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 340 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 125 W D C - Derate above 25°C 1.0 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCB11N60 Unit R Thermal Resistance, Junction-to-Case 1.0 °C/W θJC R * Thermal Resistance, Junction-to-Ambient* 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 1 FCB11N60 Rev. A
