FCA22N60N ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?applications.Application•PDP TV• Solar Inverter• AC-DC Power SupplyDGTO-3PNGS D SoMOSFET Maximum Ra ..
FCA35N60 ,N-Channel SuperFET?MOSFET 600V, 35A, 98m?Features Description® ®SuperFET MOSFET is Fairchild Semiconductor ’s first gener-• 650V @ T = 150°C ..
FCA47N60 ,600V N-Channel MOSFETFCH47N60 / FCA47N60 600V N-Channel MOSFETTMSuperFETFCH47N60 / FCA47N60 600V N-Channel MOSFET
FCB11N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB11N60TM ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FM25L512-DG , 512Kb FRAM Serial 3V Memory
FM25V01-GTR ,128-Kbit (16 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMFeatures Functional Overview256-Kbit ferroelectric random access memory (F-RAM) The FM25V02 is a 25 ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V05-GTR ,512-Kbit (64 K ?8) Serial (SPI) F-RAMFeatures Functional Overview512-Kbit ferroelectric random access memory (F-RAM) The FM25V05 is a 51 ..
FM25V05-GTR ,512-Kbit (64 K ?8) Serial (SPI) F-RAMCharacteristics ... 15Command Structure ....... 6 Power Cycle Timing . 17WREN - Set Write Enable La ..
FCA22N60N
N-Channel SupreMOS?MOSFET 600V, 22A, 165m?
FCA22N60N N-Channel MOSFET March 2013 FCA22N60N ® N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description ® ® o •BV > 650 V @ T = 150 C The SupreMOS MOSFET is Fairchild Semiconductor ’s next- DSS J generation of high voltage super-junction (SJ) technology •R = 140 mΩ (Typ.)@ V = 10 V, I = 11 A DS(on) GS D employing a deep trench filling process that differentiate it from • Ultra Low Gate Charge (Typ. Q = 45 nC) the conventional MOSFETs. This advanced technology and pre- g cise process control provide lowest Rsp on-resistance, superior • Low Effective Output Capacitance (Typ. C .eff = 196.4 pF) oss switching performance and ruggedness. SupreMOS MOSFET is • 100% Avalanche Tested suitable for high frequency switching power converter applica- tions such as PFC, server/telecom power, FPD TV power, ATX • RoHS Compliant power and industrial power applications. Application •PDP TV • Solar Inverter • AC-DC Power Supply D G TO-3PN GS D S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCA22N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o Continuous (T = 25 C) 22 C I Drain Current A D o Continuous (T = 100 C) 13.8 C I Drain Current Pulsed (Note 1) 66 A DM E Single Pulsed Avalanche Energy (Note 2) 672 mJ AS I Avalanche Current 7.3 A AR E Repetitive Avalanche Energy 2.75 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 205 W C P Power Dissipation D o o Derate above 25C1.64W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCA22N60N Unit R Thermal Resistance, Junction to Case 0.61 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.24 C/W θJS R Thermal Resistance, Junction to Ambient 40 θJA ©2009 1 FCA22N60N Rev. C0
