FCA20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCA20N60F ,N-Channel SuperFET?FRFET?MOSFET 600V, 20A, 190m?Applicationssystem reliability.• LCD / LED / PDP TV• Solar Inverter• AC-DC Power SupplyDG GTO-3PNDS ..
FCA20N60S , Power Factor Correction Converter Design
FCA20N60S , Power Factor Correction Converter Design
FCA22N60N ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?applications.Application•PDP TV• Solar Inverter• AC-DC Power SupplyDGTO-3PNGS D SoMOSFET Maximum Ra ..
FCA35N60 ,N-Channel SuperFET?MOSFET 600V, 35A, 98m?Features Description® ®SuperFET MOSFET is Fairchild Semiconductor ’s first gener-• 650V @ T = 150°C ..
FM25L256-S , 256Kb FRAM Serial 3V Memory - Extended Temp
FM25L512-DG , 512Kb FRAM Serial 3V Memory
FM25V01-GTR ,128-Kbit (16 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMFeatures Functional Overview256-Kbit ferroelectric random access memory (F-RAM) The FM25V02 is a 25 ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V05-GTR ,512-Kbit (64 K ?8) Serial (SPI) F-RAMFeatures Functional Overview512-Kbit ferroelectric random access memory (F-RAM) The FM25V05 is a 51 ..
FCA20N60-FCH20N60
600V N-Channel SuperFET
FCH20N60 / FCA20N60 600V N-Channel MOSFET TM SuperFET FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.15Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Q = 75nC) lower gate charge performance. g • Low effective output capacitance (typ. C .eff = 165pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D ! ! "" !! "" "" ! ! G "" TO-247 TO-3P ! ! G D S GS D S Absolute Maximum Ratings Symbol Parameter FCH20N60 FCA20N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 20 A D C - Continuous (T = 100°C) 12.5 A C (Note 1) I Drain Current - Pulsed A DM 60 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 690 mJ AS (Note 1) I Avalanche Current 20 A AR (Note 1) E Repetitive Avalanche Energy 20.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 208 W D C - Derate above 25°C 1.67 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.6 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- θCS R Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W θJA ©2005 1 FCH20N60 / FCA20N60 Rev. A
