FCA16N60N ,N-Channel SupreMOS?MOSFET 600V, 16A, 199m?applications.Application•PDP TV• AC-DC Power SupplyDGTO-3PNGS DSoMOSFET Maximum Ratings T = 25 C u ..
FCA20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCA20N60F ,N-Channel SuperFET?FRFET?MOSFET 600V, 20A, 190m?Applicationssystem reliability.• LCD / LED / PDP TV• Solar Inverter• AC-DC Power SupplyDG GTO-3PNDS ..
FCA20N60S , Power Factor Correction Converter Design
FCA20N60S , Power Factor Correction Converter Design
FCA22N60N ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?applications.Application•PDP TV• Solar Inverter• AC-DC Power SupplyDGTO-3PNGS D SoMOSFET Maximum Ra ..
FM25L256-S , 256Kb FRAM Serial 3V Memory - Extended Temp
FM25L512-DG , 512Kb FRAM Serial 3V Memory
FM25V01-GTR ,128-Kbit (16 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMFeatures Functional Overview256-Kbit ferroelectric random access memory (F-RAM) The FM25V02 is a 25 ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V05-GTR ,512-Kbit (64 K ?8) Serial (SPI) F-RAMFeatures Functional Overview512-Kbit ferroelectric random access memory (F-RAM) The FM25V05 is a 51 ..
FCA16N60N
N-Channel SupreMOS?MOSFET 600V, 16A, 199m?
FCA16N60N N-Channel MOSFET March 2013 FCA16N60N ® N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description ® ® •R = 170 mΩ (Typ.) @ V = 10V, I = 8 A The SupreMOS MOSFET is Fairchild Semiconductor ’s next DS(on) GS D generation of high voltage super-junction (SJ) technology • Ultra low gate charge (Typ. Q = 40.2 nC) g employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and • Low effective output capacitance (Typ. C .eff = 176 pF) oss precise process control provides lowest Rsp on-resistance, • 100% avalanche tested superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- • RoHS compliant verter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application •PDP TV • AC-DC Power Supply D G TO-3PN GS D S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCA16N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 16.0 C I Drain Current A D o -Continuous (T = 100 C) 10.1 C I Drain Current - Pulsed (Note 1) 48.0 A DM E Single Pulsed Avalanche Energy (Note 2) 355 mJ AS I Avalanche Current 5.3 A AR E Repetitive Avalanche Energy 1.34 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 134.4 W C P Power Dissipation D o o - Derate above 25C1.08W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCA16N60N Unit R Thermal Resistance, Junction to Case 0.93 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.24 C/W θCS R Thermal Resistance, Junction to Ambient 40 θJA ©2009 1 FCA16N60N Rev. C0
