| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FBF332 |
FRANCE |
N/a |
103 |
 |
|
FBI4J5M1 , 4 Amp. Glass Passivated Bridge Rectifier
FBMH1608HL601-T , Chip Bead Inductors for Power Lines (FB series M type)
FBMH3216HM501NT , Chip Bead Inductors for Power Lines (FB series M type)
FBMH3216HM501NT , Chip Bead Inductors for Power Lines (FB series M type)
FBMJ3216HM380NT , Chip Bead Inductors for Power Lines (FB series M type)
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETFEATURES
. High Output Power: P1dB=32.5dBm (Typ.)
. High Gain: G1dB=12.5dB (Typ.)
. High PAE ..
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent ..
FLL351ME ,L-band medium & high power gaas FTEsapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent Q ..
