FAN8800 ,V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFETApplications Gate drive for single insulated gate bipolar TR Gate drive for single MOSFET Rev. 1 ..
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FAN8800
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET
Features High Current Output: 1.0A Source and 2.0A Sink Protection against Overcurrent and Short circuit CMOS Compatible Input and Fault Status Indicator Programmable Fault-Out Duration Time Built in Slow Turn-off Circuit Under Fault Condition Undervoltage Lockout Optimized for IGBTs Negative Gate Drive Capability Suitable for Integration in Power Modules -40 to 105°C Operating Temperature
DescriptionThe FAN8800 is a monolithic integrated circuit designed for
driving single IGBT with De-saturation and undervoltage
protection. It is suitable for driving discrete and module
IGBTs, and further, it offers a cost effective solution for driv-
ing power MOSFETs. The integrated fault feedback notifies
the controller when the IGBT is shutdown due to a De-satu-
ration or a over current condition.
