Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FA5501AN-TE1 |
|
N/a |
1505 |
|
|
FA5501AN-TE1 |
FUJI |
N/a |
1885 |
|
|
FA5501AN-TE1 |
FUJITSU|Fujitsu Microelectronics |
N/a |
175 |
|
|
FA5502 ,POWER SUPPLY CONTROL ICFeatures 2. • • • • • • • • • • • • • • • 4 Outline 3. • • • • • • • • • • • • • • • 4
FA5510P ,PWM controller for switching powerFeatures•Low current consumption by CMOS process with high±0.1dielectric strength (30V)0.4 1.27• St ..
FA5511N ,PWM controller for switching powerFeatures•Low current consumption by CMOS process with high±0.1dielectric strength (30V)0.4 1.27• St ..
FA5511P ,PWM controller for switching powerFeatures•Low current consumption by CMOS process with high±0.1dielectric strength (30V)0.4 1.27• St ..
FA5514P ,CMOS IC For Switching Power Supply Control0~15˚CMOS ICFA551X seriesFor Switching Power Supply ControlFA551XFA5510P (N), FA5511P (N) Dimensio ..
FE2B ,Ultra Fast Sinterglass Diode Document Number 860694 Rev. 2, 28-Jan-03FE2A to FE2DVISHAYVishay SemiconductorsOzone Depleting Sub ..
FE2C ,Ultra Fast Sinterglass DiodeElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
FE2D ,Ultra Fast Sinterglass DiodeFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..