| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FA5331M-E1 |
FUJITSU|Fujitsu Microelectronics |
N/a |
445 |
 |
|
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332P ,Bipolar IC for switching power supply controlFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5502 ,POWER SUPPLY CONTROL ICFeatures 2. • • • • • • • • • • • • • • • 4 Outline 3. • • • • • • • • • • • • • • • 4
FA5510P ,PWM controller for switching powerFeatures•Low current consumption by CMOS process with high±0.1dielectric strength (30V)0.4 1.27• St ..
FE1B ,Ultra Fast Sinterglass Diode Document Number 860682 Rev. 2, 28-Jan-03Average Forward Rectified Current (A)Peak Forward Surge Cu ..
FE1D ,GLASS PASSIVATED FAST EFFICIENT RECTIFIERFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FE2B ,Ultra Fast Sinterglass Diode Document Number 860694 Rev. 2, 28-Jan-03FE2A to FE2DVISHAYVishay SemiconductorsOzone Depleting Sub ..
