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FA1L4M-T1B |FA1L4MT1BNECN/a93000avaiCompound transistor
FA1L4M-T2B |FA1L4MT2BNECN/a12000avaiCompound transistor


FA1L4M-T1B ,Compound transistorFEATURES 0 Resistors Built-in TYPE 2.8i02 (Y15 'i', _ R1 =47 k9 E R1 R2 = 47 k9 R2 E ..
FA1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta =25 °C) CHARACTERISTIC SYMBOL TYP. MAX. A, UNIT 4 TEST CONDITIONS ..
FA1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC TEST CONDITIONS . Collector Cutoff ..
FA1L4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC TEST CONDITIONS . Collector Cutoff ..
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FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor        ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor        ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor        ..


FA1L4M-T1B-FA1L4M-T2B

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