FA1L3Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "m
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collector ..
FA1L3Z-T2B ,Compound transistorFEATURES
in millimeters o Resistor Built-in TYPE B C
2.8K0.2 R1 = 4.7 ki2
o. 65ttls _ . R1 E
. ..
FA1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS iTa= 25 °c)
CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS iTa= 25 °c)
CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L4L-T2B ,Compound transistorFEATURES
. Resistors Built-in TYPE
.__2 ..,_. __.2 Ma
PACKAGE DIMENSIONS
in millimeters
..
FA1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta =25 °C)
CHARACTERISTIC SYMBOL TYP. MAX. A, UNIT 4 TEST CONDITIONS ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FA1L3Z-T1B-FA1L3Z-T2B
