Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FA1L3Z-K |
NEC|NEC |
N/a |
5338 |
|
|
FA1L3Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "m
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collector ..
FA1L3Z-T2B ,Compound transistorFEATURES
in millimeters o Resistor Built-in TYPE B C
2.8K0.2 R1 = 4.7 ki2
o. 65ttls _ . R1 E
. ..
FA1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS iTa= 25 °c)
CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS iTa= 25 °c)
CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L4L-T2B ,Compound transistorFEATURES
. Resistors Built-in TYPE
.__2 ..,_. __.2 Ma
PACKAGE DIMENSIONS
in millimeters
..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..