| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FA1A4P-T2B-A |
NEC|NEC |
N/a |
1100 |
 |
|
FA1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c)
_ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
_ ¢~. _ ..
FA1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
_ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
_ ¢~. _ ..
FA1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . _ I . . TEST CONDITIONS
_
..
FA1F4M-T1B ,Compound transistorFA1 F4M
FA1F4M-T2B ,Compound transistorFA1 F4M
FDS9934C ,20V Complementary PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required. Q2D2D5 4D2DD1D36D1DQ17 2 ..
FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
