FA1A4P-T1B ,Compound transistorFEATURES
PACKAGE DIMENSIONS o ResistorsBuilt-in TYPE
in millimeters
2.8i0.2
i' . . +0.!
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FA1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c)
_ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
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FA1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
_ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
_ ¢~. _ ..
FA1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . _ I . . TEST CONDITIONS
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FA1F4M-T1B ,Compound transistorFA1 F4M
FA1F4M-T2B ,Compound transistorFA1 F4M
FDS9933A_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(on)• Load switch• High power and current handling capability.• DC/DC converte ..
FDS9934C ,20V Complementary PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required. Q2D2D5 4D2DD1D36D1DQ17 2 ..
FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as diskused surface mount package.drive motor control, battery powered circuits w ..
FA1A4P-T1B
