Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FA1A4M=DTC114EK |
NEC|NEC |
N/a |
12000 |
|
|
FA1A4M-L ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M-T1B ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M-T2B ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL , . . . TEST CONDITIONS
Collector ..
FA1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDFEATURES
PACKAGE DIMENSIONS o ResistorsBuilt-in TYPE
in millimeters
2.8i0.2
i' . . +0.!
..
FDS9933 ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Motor ..
FDS9933_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, R = 55 mΩ @ V = –4.5 V DS ..
FDS9933A ,Dual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -3.8 A, -20 V. R = 0.075 ..