Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FA1A3Q/L83 |
NEC|NEC |
N/a |
15000 |
|
|
FA1A3Q-T1B ,Compound transistorNEG
ELECTRON DEVICE
,a i.
DATA SHEET
SILICON TRANSISTOR
_jl!'Plr'lll/k?a
MEDIUM S ..
FA1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC
SYMBOL
60 v
V 50 v
5 v
100 mA
2 ..
FA1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M-L ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FDS9926A ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use • 6.5 A, 20 V. R = 0.030 Ω @ V = 4.5 ..
FDS9926A_NL ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. R = 30 mΩ @ V = 4.5 VDS( ..
FDS9926A_NL. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETapplications with a wide range of gate drive voltage• Optimized for use in battery protection circu ..