| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F5GZ47 |
TOSHAIB|TOSHIBA |
N/a |
550 |
 |
|
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F6850P , Asynchronous Communications Interface Adapter (ACIA)
F68A50S , Asynchronous Communications Interface Adapter (ACIA)
FDS4465 ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET is a rugged• –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 VDS ..
FDS4465_F085 ,P-Channel 1.8V Specified PowerTrench?MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Power management • H ..
FDS4465_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
