Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F5EB-881M50-B28R-Z |
FUJITSU|Fujitsu Microelectronics |
N/a |
2830 |
|
|
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F6850P , Asynchronous Communications Interface Adapter (ACIA)
F68A50S , Asynchronous Communications Interface Adapter (ACIA)
FDS4435BZ ,-30V P-Channel PowerTrench?MOSFETGeneral Description Max r = 20m at V = -10V, I = -8.8A This P-Channel MOSFET is produced using Fa ..
FDS4435BZ. ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook Computers and DS(on) High power and current handling capability Po ..
FDS4435BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook Computers and DS(on) High power and current handling capability Po ..