Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F591208/QX |
HUAWEI |
N/a |
90 |
|
|
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F6850P , Asynchronous Communications Interface Adapter (ACIA)
F68A50S , Asynchronous Communications Interface Adapter (ACIA)
FDS4435 ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS ..
FDS4435.. ,30V P-Channel PowerTrench MOSFETFDS4435 October 2001 FDS4435 Ò Ò30V P-Channel PowerTrench MOSFET
FDS4435_NL ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..