| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F5052H |
FUJI |
N/a |
1000 |
 |
|
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F6850P , Asynchronous Communications Interface Adapter (ACIA)
F68A50S , Asynchronous Communications Interface Adapter (ACIA)
FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFET®FDS2672 N-Channel UltraFET Trench MOSFETAugust 2006FDS2672 ..
