Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F4F51-001 |
TIS|Texas Instruments |
N/a |
397 |
|
|
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F5KQ90B , SCHOTTKY BARRIER DIODE
F6850P , Asynchronous Communications Interface Adapter (ACIA)
F68A50S , Asynchronous Communications Interface Adapter (ACIA)
FDR838P_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Load switch low R .DS(ON)• Mo ..
FDR840P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –10 A, –20 V. R = 12 mΩ @ V = –4.5 VDS( ..
FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..