| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F410FEB/27.000MHZ |
|
N/a |
1905 |
 |
|
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
F4-50R12MS4 , EconoDUAL™2 Modul mit schnellem IGBT2 für hochfrequentes Schalten und NTC
F4-75R12KS4 , IGBT-inverter
F4-75R12MS4 , EconoDUAL™2 Modul mit schnellem IGBT2 für hochfrequentes Schalten und NTC
FDP4030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP46N30 ,300V N-Channel MOSFETFeatures Description• 46A, 300V, R = 0.079Ω @V = 10 V These N-Channel enhancement mode power field ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 60 m (Max.) ..
