| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F3828H |
TOS|TOSHIBA |
N/a |
49 |
 |
|
| F3828H |
KDV |
N/a |
1000 |
|
|
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
F4-50R12MS4 , EconoDUAL™2 Modul mit schnellem IGBT2 für hochfrequentes Schalten und NTC
FDN372S ,30V N-Channel PowerTrench SyncFETFeatures The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. R = 40 mΩ @ V = 10 V D ..
FDN5618 ,60V P-Channel Logic Level PowerTrench MOSFETApplications• DC-DC converters • High performance trench technology for extremelylow RDS(ON)• Load ..
FDN5618P ,60V P-Channel Logic Level PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –1.25 A, –60 V. R = 0.170 Ω @ V = –10 VDS( ..
