Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F3504S |
IR|International Rectifier |
N/a |
427 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN357N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDN358 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDN358P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –1.5 A, –30 V. R = 125 mΩ @ V = –10 V DS(O ..