| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F32B222X |
SELMAC |
N/a |
24000 |
 |
|
| F32B222X |
NIIGATA |
N/a |
1995 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDN338P_NL-- ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures This P-Channel 2.5V specified MOSFET uses • –1.6 A, –20 V. R = 115 mΩ @ V = –4.5 V DS(ON) ..
FDN339AN ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 Ω @ V = 4.5 VDS(ON) ..
