Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F324LJ4T6 |
ST|ST Microelectronics |
N/a |
370 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFDN338P September 2001 FDN338P Ò ÒP-Channel 2.5V Specified PowerTrench MOSFET
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplications. • Fast switching speed
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..