Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F32015 |
SANYO|SANYO |
N/a |
17 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN336P ,Single P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral Description 336DN November ..
FDN336P_NL ,Single P-Channel Logic Level PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV VoI C CΔ / ΔTJI V V µ Aµ ATI VI V)V ..
FDN337N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesTMSuperSOT -3 N-Channel logic level enhancement mode 2.2 A, 30 V, R = 0.065 Ω @ V = 4.5 V ..