Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F312241PBM |
TI|Texas Instruments |
N/a |
670 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN327N ,N-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001FDN327N
FDN335 ,N-Channel 2.5V Specified PowerTrenchTM MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switchD DSGSTMGSup ..
FDN335N ,N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 VThis N-Channel 2.5V specified MOSFET is producedDS(ON ..