Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F30S60S |
FSC|Fairchild Semiconductor |
N/a |
23 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN306P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.6 A, –12 V. R = 40 mΩ @ V = –4.5 V DS(ON) ..
FDN308P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 ..
FDN327N ,N-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001FDN327N