Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F3069TE25V |
RENESAS |
N/a |
133 |
|
|
F3826C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
FDN304P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 VDS(ON) GSF ..
FDN304P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDN304PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 V DS(ON) ..