| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F3-ILCT05 |
HYPERSTONE |
N/a |
16 |
 |
|
F3L50R06W1E3_B11 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-100R12KS4 , IGBT-modules
F4-30R06W1E3 , EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
F4-50R12KS4 , IGBT-inverter
F4-50R12MS4 , EconoDUAL™2 Modul mit schnellem IGBT2 für hochfrequentes Schalten und NTC
FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?General Description•R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220ABFDB050AN06A0 / FDP050AN06A0February 2003FDB050AN06A0 / FDP050AN06A0®N-Channel PowerTrench MOSFET60 ..
