| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F26V12 |
NS|National Semiconductor |
N/a |
500 |
 |
|
F28F008SA-120 , 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
F28F008SA-120 , 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
F28F010-120 , 1024K (128K x 8) CMOS FLASH MEMORY
F28F010-150 , 1024K (128K x 8) CMOS FLASH MEMORY
F29C51004 , The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
FDMS5352 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.7m: at V = 10V, I = 13.6A This N-Channel MOSFET is produced usin ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFETapplications. Max r = 16.5mΩ at V = 6V, I = 8ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 11.5mΩ at V = 10V, I = 10.6AUItraFET devices combine characteristics t ..
