| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1V62BTP |
ORIGIN |
N/a |
6500 |
 |
|
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2002 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2012 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDLL400 ,High Voltage General Purpose Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FDLL4148 ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
FDLL4148_NL ,High Conductance Fast Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
