Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F1SN8TP |
ORIGIN |
N/a |
18000 |
|
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDLL300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDLl400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..