| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1S70N06 |
HARRIS|Intersil |
N/a |
1 |
 |
|
| F1S70N06 |
FAIR|Fairchild Semiconductor |
N/a |
1041 |
|
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDLL300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
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