| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1Q2.G |
|
N/a |
80 |
 |
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETFeatures This P-Channel -2.5V specified MOSFET uses • –4.2 A, –20 V. R = 70 mΩ @ V = –4.5 V DS(ON) ..
FDJ129P ,P-Channel -2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
