| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1P2STP |
ORIGIN |
N/a |
6200 |
 |
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDJ127P ,P-Channel -1.8 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
