| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1N2TP |
ORIGIN |
N/a |
4500 |
 |
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –2.8 A, –20 V R = 160 mΩ @ V = –4.5 V ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This dual N-Channel 2.5V specified MOSFET uses • 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) ..
