Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F1N24C |
FSC|Fairchild Semiconductor |
N/a |
97 |
|
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETApplications capability • Battery management/Charger Application • High performance trench technol ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –2.8 A, –20 V R = 160 mΩ @ V = –4.5 V ..