| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1J9TP |
ORIGIN |
N/a |
2400 |
 |
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDI3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDI3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDI3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
