| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1H20C |
|
N/a |
11 |
 |
|
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDH333 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH3632 ,100V N-Channel PowerTrench MOSFETApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDH3632 ,100V N-Channel PowerTrench MOSFETFDB3632 / FDP3632 / FDI3632 / FDH3632November 2004FDB3632 / FDP3632 / FDI3632 / FDH3632®N-Channel P ..
