| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1AJ4 |
ORIGIN |
N/a |
2600 |
 |
|
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG8842CZ ,Q1:30V/Q2: -25V Complementary PowerTrench?MOSFETGeneral DescriptionThese N & P-Channel logic level enhancement mode field effect Q1: N-Channeltrans ..
FDG8850NZ ,30V Dual N-Channel PowerTrench?MOSFETapplications as a replacement for bipolar digital transistors and small signal Very small package ..
FDG901D ,Slew Rate Control Driver IC for P-Channel MOSFETsApplications • Compact industry standard SC70-5 surface mount package • Power management • Battery ..
