| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1AJ3TP |
ORIGIN |
N/a |
10700 |
 |
|
| F1AJ3TP |
|
N/a |
465 |
|
|
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6342L ,Integrated Load SwitchApplications High performance trench technology for extremely low rDS(on) Power management Compa ..
FDG8842CZ ,Q1:30V/Q2: -25V Complementary PowerTrench?MOSFETGeneral DescriptionThese N & P-Channel logic level enhancement mode field effect Q1: N-Channeltrans ..
FDG8850NZ ,30V Dual N-Channel PowerTrench?MOSFETapplications as a replacement for bipolar digital transistors and small signal Very small package ..
