| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1AA012T-12VDC |
FT |
N/a |
20 |
 |
|
| F1AA012T-12VDC |
FUJI |
N/a |
80 |
|
|
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6335N ,20V N-Channel PowerTrench MOSFETFDG63 135NFDG6335N® ® NV-Channel hThis N-Channel MOSFET has been designed• 7 A, R = m Ω = specific ..
FDG6342L ,Integrated Load SwitchApplications High performance trench technology for extremely low rDS(on) Power management Compa ..
FDG8842CZ ,Q1:30V/Q2: -25V Complementary PowerTrench?MOSFETGeneral DescriptionThese N & P-Channel logic level enhancement mode field effect Q1: N-Channeltrans ..
