| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1A96007 |
ORIGIN |
N/a |
1500 |
 |
|
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsApplicationsDS(ON)low RGSDS(ON) @ VGSDS(ON) @ VQ2GSDS(ON) @ VGSDS(ON) @ VQ1
FDG6335N ,20V N-Channel PowerTrench MOSFETFDG63 135NFDG6335N® ® NV-Channel hThis N-Channel MOSFET has been designed• 7 A, R = m Ω = specific ..
FDG6342L ,Integrated Load SwitchApplications High performance trench technology for extremely low rDS(on) Power management Compa ..
