| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F191UY |
宏齐 |
N/a |
4000 |
 |
|
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6331L_NL ,Integrated Load SwitchApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsFDG6332CFDG6332C® ®PowerTrench The N & P-Channel MOSFETs are produced using• 0.7 A, 20V.R = 300 ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsapplications where the bigger more expensiveTSSOP-8 and SSOP-6 packages are impractical.• High perf ..
