| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1807C |
TOS|TOSHIBA |
N/a |
47 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6323 ,Integrated Load SwitchElectrical CharacteristicsDROPO (T = 25 C unless otherwise noted )AT = 125°CV = 5VIN JV ..
FDG6323 ,Integrated Load SwitchFeaturesVV @ V=5V, IA. R = 0.55 Ω DINL)This is particularly suited for compactV ..
FDG6323 ,Integrated Load Switchapplications:First select R2,100 - 1KΩ, for Slew Rate control.Then select R1 such that R1/R2 ratio ..
