| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F18004 |
MOT|Motorola |
N/a |
10 |
 |
|
| F18004 |
ON|ON Semiconductor |
N/a |
200 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6322C ,Dual N & P Channel Digital FETGeneral DescriptionDigital FETDual N & P C322C F O(TATypeV VVo oI C CΔ / Δ TJoI CI V V 1 µ ATI V ..
FDG6323 ,Integrated Load SwitchElectrical CharacteristicsDROPO (T = 25 C unless otherwise noted )AT = 125°CV = 5VIN JV ..
FDG6323 ,Integrated Load SwitchFeaturesVV @ V=5V, IA. R = 0.55 Ω DINL)This is particularly suited for compactV ..
