| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1772-347-4160 |
ROE |
N/a |
15000 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6321 ,Dual N & P Channel Digital FET.21 1998 ..
FDG6321C ,Dual N & P Channel Digital FETGeneral Description321DG November ..
FDG6322C ,Dual N & P Channel Digital FETGeneral DescriptionDigital FETDual N & P C322C F O(TATypeV VVo oI C CΔ / Δ TJoI CI V V 1 µ ATI V ..
