| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F16X93 |
|
N/a |
500 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6317NZ ,Dual 20V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• Compact industry standard SC70-6 surface mount• Power man ..
FDG6318P ,Dual P-Channel, Digital FETFeatures These dual P-Channel logic level enhancement mode • –0.5 A, –20 V. R = 780 mΩ @ V = –4.5 V ..
FDG6320C ,Dual N & P Channel Digital FETGeneral Description320DG November ..
